• 文献标题:   Potential fluctuations in graphene due to correlated charged impurities in substrate
  • 文献类型:   Article
  • 作  者:   ANICIC R, MISKOVIC ZL
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Waterloo
  • 被引频次:   4
  • DOI:   10.1063/1.4826946
  • 出版年:   2013

▎ 摘  要

We evaluate the autocorrelation function of the electrostatic potential in doped graphene due to nearby charged impurities. The screening of those impurities is described by a combination of the polarization function for graphene in random phase approximation with the electrostatic Green's function of the surrounding dielectrics. Using the hard-disk model for a two-dimensional distribution of impurities, we show that large correlation lengths between impurities can give rise to anti-correlation in the electrostatic potential, in agreement with recent experiments. (C) 2013 AIP Publishing LLC.