• 文献标题:   Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation
  • 文献类型:   Article
  • 作  者:   LIN JH, LIN YJ, CHANG HC
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING
  • ISSN:   0947-8396 EI 1432-0630
  • 通讯作者地址:   Natl Changhua Univ Educ
  • 被引频次:   4
  • DOI:   10.1007/s00339-014-8742-3
  • 出版年:   2015

▎ 摘  要

The present work reports the fabrication and detailed electrical properties of graphene/p-type polycrystalline silicon (poly-Si) Schottky diodes with and without ultraviolet irradiation. Ultraviolet treatment may lead to the reduced work function of graphene, thus increasing the Schottky barrier height at the graphene/poly-Si interface. Compared to the graphene/poly-Si Schottky diodes without ultraviolet treatment, the ultraviolet-treated graphene/poly-Si Schottky diodes exhibit lower ideality factor and higher responsivity. The sensitivity of the work function of graphene to the ultraviolet irradiation time provides an opportunity to tune the electrical parameters of graphene/poly-Si Schottky diodes. The ability to controllably tune the work function of graphene is essential for optimizing the efficiency of optoelectronic and electronic devices.