▎ 摘　　要

The effects of gamma-ray irradiation on graphene/n-Si Schottky diodes are investigated. The electrical characteristics are measured before and after serial radiation doses in a dark environment. Experimental results show an increase of reverse current and ideality factor, while the Schottky barrier height decreases. The XPS results indicate that gamma-ray irradiation mainly leads to a break in Si-O and C=C bonds; the C dangling bonds can combine with dangling O on the surface of SiO2 while leaving Si dangling bonds in SiO2. These Si dangling bonds seriously degrade the electrical performance of the device. (C) 2019 The Japan Society of Applied Physics