▎ 摘　　要

Patterned graphene oxide (GO) layer is prepared by site-selective deposition of GO on patterned self-assembled monolayer (SAM). Deep ultraviolet (DUV) exposure on octadecyltrichlorosilane (OTS) SAM through photomask produces hydrophobic/hydrophilic pattern, and the hydrophilic region is reacted with aminopropyltriethoxysilane (APTES), which is preferentially wetted with GO through ionic interaction between carboxylic acid groups of GO and amino groups of APTES SAM. As-prepared GO pattern can be further transformed to chemically reduced graphene oxide (RGO) pattern after chemical reduction with hydrazine. Both Raman and electrical conductivity measurements confirm the successive preparation of RGO pattern.