• 文献标题:   Effect of hydrogen adsorption energy on the electronic and optical properties of Si-modified single-layer graphene with an Al decoration
  • 文献类型:   Article
  • 作  者:   ZHANG Y, CUI H, TIAN WZ, LIU T, WANG YZ
  • 作者关键词:  
  • 出版物名称:   AIP ADVANCES
  • ISSN:  
  • 通讯作者地址:   Shaanxi Univ Technol
  • 被引频次:   0
  • DOI:   10.1063/1.5144622
  • 出版年:   2020

▎ 摘  要

The adsorption energy and changes in the structural, electronic, and optical properties of an Al-modified Si-doped single-layer graphene (SLG) structure after hydrogen adsorption were studied using first-principles calculations. The simulation results revealed that the hydrogen adsorption energy of SLG + Si + Al gradually increased to 0.571 eV with an increase in the number of hydrogen molecules. After structural optimization, the C-C bond and the C-Si-C bond angle of SLG + Si + Al regular hexagonal lattice changed within 1.430-1.440 angstrom and decreased by 29.997 degrees, respectively. In the SLG + Si + Al structure, the resonance of electrons was strengthened, the absorption spectrum of light was enhanced, the width of the absorption peak increased, and electrons absorbed more energy in the transition process.