• 文献标题:   Tunneling Conductance of the Graphene SNS Junction with a Single Localized Defect
  • 文献类型:   Article
  • 作  者:   BOLMATOV D, MOU CY
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF EXPERIMENTAL THEORETICAL PHYSICS
  • ISSN:   1063-7761
  • 通讯作者地址:   Natl Tsing Hua Univ
  • 被引频次:   14
  • DOI:   10.1134/S1063776110040084
  • 出版年:   2010

▎ 摘  要

Using the Dirac-Bogoliubov-de Gennes equation, we study the electron transport in a graphene-based superconductor-normal(graphene)-superconductor (SNS) junction. We consider the properties of tunneling conductance through an undoped strip of graphene with heavily doped superconducting electrodes in the dirty limit l(def) << L << xi. We find that the spectrum of Andreev bound states is modified in the presence of a single localized defect in the bulk. The minimum tunneling conductance remains the same, and this result is independent of the actual location of the imperfection.