• 文献标题:   Gate-Controlled Nonlinear Conductivity of Dirac Fermion in Graphene Field-Effect Transistors Measured by Terahertz Time-Domain Spectroscopy
  • 文献类型:   Article
  • 作  者:   MAENG I, LIM S, CHAE SJ, LEE YH, CHOI H, SON JH
  • 作者关键词:   graphene, thztime domain spectroscopy, optical conductivity, scattering time, intraband transition
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984
  • 通讯作者地址:   Sungkyunkwan Univ
  • 被引频次:   122
  • DOI:   10.1021/nl202442b
  • 出版年:   2012

▎ 摘  要

We present terahertz spectroscopic measurements of Dirac fermion dynamics from a large-scale graphene that was grown by chemical vapor deposition and on which carrier density was modulated by electrostatic and chemical doping. The measured frequency-dependent optical sheet conductivity of graphene shows electron-density-dependence characteristics, which can be understood by a simple Drude model. In a low carrier density regime, the optical sheet conductivity of graphene is constant regardless of the applied gate voltage, but in a high carrier density regime, it has nonlinear behavior with respect to the applied gate voltage. Chemical doping using viologen was found to be efficient in controlling the equilibrium Fermi level without sacrificing the unique carrier dynamics of graphene.