• 文献标题:   Planar Graphene-Narrow-Gap Semiconductor-Graphene Heterostructure
  • 文献类型:   Article
  • 作  者:   RATNIKOV PV, SILIN AP
  • 作者关键词:  
  • 出版物名称:   BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE
  • ISSN:   1068-3356
  • 通讯作者地址:  
  • 被引频次:   3
  • DOI:   10.3103/S106833560811002X
  • 出版年:   2008

▎ 摘  要

A planar heterostructure composed of two graphene films between which a narrow-gap semiconductor ribbon is inserted was studied. It was shown that the Klein paradox is absent when conical points of the graphene Brillouin zone are in the band gap of a narrow-gap semiconductor. There is an energy range dependent on the angle of incidence, in which an above-barrier decaying solution can exist. Thereby, such a heterostructure is a filter transmitting particles in a certain range of angles of incidence on the potential barrier. The applicability of such a heterostructure as a gate is discussed.