▎ 摘　　要

We investigate graphene transport and structural properties as a function of silicon carbide (SiC) wafer orientation. Terrace step edge density is found to increase with wafer misorientation from SiC(0001). This results in a monotonic increase in average graphene thickness, as well as a 30% increase in carrier density and 40% decrease in mobility up to 0.45 degrees miscut toward (1 (1) over bar 00). Beyond 0.45 degrees, average thickness and carrier density continues to increase; however, carrier mobility is similar to low-miscut angles, suggesting that the interaction between graphene and SiC(0001) may be fundamentally different that of graphene/SiC(1 (1) over bar 0n). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3597356]