• 文献标题:   Charge neutrality of quasi-free-standing monolayer graphene induced by the intercalated Sn layer
  • 文献类型:   Article
  • 作  者:   KIM H, DUGERJAV O, LKHAGVASUREN A, SEO JM
  • 作者关键词:   quasifreestanding epitaxial graphene, doping, charge neutrality, tin, intercalation
  • 出版物名称:   JOURNAL OF PHYSICS DAPPLIED PHYSICS
  • ISSN:   0022-3727 EI 1361-6463
  • 通讯作者地址:   Chonbuk Natl Univ
  • 被引频次:   1
  • DOI:   10.1088/0022-3727/49/13/135307
  • 出版年:   2016

▎ 摘  要

It has been confirmed by angle-resolved photoemission spectroscopy that decoupled quasifree- standing monolayer graphene (QFMLG), obtained by Sn intercalation between the (6 root 3 x 6 root 3)R30 degrees buffer layer and the 6H-SiC(0 0 0 1) substrate, is charge-neutral, i.e. the Dirac point matches with the Fermi level. By combined studies of scanning tunneling microscopy/spectroscopy and core-level/valence-band photoemission spectroscopy on this system, it has been found that the intercalated Sn atoms, bonding with the Si atoms of the top Si-C bilayer on the substrate comprise a hexagonal 10x10 layer, which turns out to be metallic. Such a metallic character, which has never been found in intercalation using different elements, is a major cause of charge neutrality of QFMLG, since conduction electrons of the Sn layer compensate completely spontaneous polarization charges of 6H-SiC(0 0 0 1). This charge-neutral QFMLG is stable at a high temperature of 850 degrees C.