• 文献标题:   Thermal Stability of Single-layer Graphene Subjected to Confocal Laser Heating Investigated by Using in situ Anti-Stokes and Stokes Raman Spectroscopy
  • 文献类型:   Article
  • 作  者:   SUN YY, YANAGISAWA M, HOMMA T
  • 作者关键词:   graphene, thermal stability, raman spectroscopy, insitu
  • 出版物名称:   ELECTROCHEMISTRY
  • ISSN:   1344-3542
  • 通讯作者地址:   Waseda Univ
  • 被引频次:   0
  • DOI:   10.5796/electrochemistry.85.195
  • 出版年:   2017

▎ 摘  要

The thermal stability of graphene has a close relationship with defect generation, thermal oxidation, which in turn have a significant bearing on its properties and applications. This report discusses the effect of confocal laser heating on the structure of single-layer graphene (SLG) on the basal plane and the edge. The thermal stability of SLG basal plane and edge was demonstrated to be different by using in situ anti-Stokes and Stokes Raman spectroscopy. The basal plane was found to be unstable above 500 degrees C, while the edge could not endure even 220 degrees C. The variation in the intensity of D, G, and 2D peaks and the intensity ratios of I(D)/I(G) and I(2D)/I(G) indicated that the thermal instability started with defect generation at the basal plane. The initial point defects at edge were partially eliminated at low temperature and generated again at temperatures above 220 degrees C. (C) The Electrochemical Society of Japan, All rights reserved.