• 文献标题:   Non-hexagonal-ring defects and structures induced by healing and strain in graphene and functionalized graphene
  • 文献类型:   Article
  • 作  者:   DA SILVAARAUJO J, NASCIMENTO AJM, CHACHAM H, NUNES RW
  • 作者关键词:  
  • 出版物名称:   NANOTECHNOLOGY
  • ISSN:   0957-4484 EI 1361-6528
  • 通讯作者地址:   Univ Fed Minas Gerais
  • 被引频次:   12
  • DOI:   10.1088/0957-4484/24/3/035708
  • 出版年:   2013

▎ 摘  要

We perform ab initio calculations for the strain-induced formation of non-hexagonal-ring defects in graphene, graphane (hydrogen-functionalized graphene) and graphenol (hydroxyl-functionalized graphene). We find that the simplest of such topological defects, the Stone-Wales defect, acts as a seed for strain-induced dissociation and multiplication of topological defects. Through the application of inhomogeneous deformations to graphene, graphane and graphenol with varying initial concentrations of pentagonal and heptagonal rings and small-sized voids, we obtain several novel stable structures that possess, at the same time, large concentrations of non-hexagonal rings (from fourfold to elevenfold) and small formation energies.