• 文献标题:   Chemical-doping-driven crossover from graphene to "ordinary metal" in epitaxial graphene grown on SiC
  • 文献类型:   Article
  • 作  者:   CHUANG CS, YANG YF, POOKPANRATANA S, HACKER CA, LIANG CT, ELMQUIST RE
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   NIST
  • 被引频次:   9
  • DOI:   10.1039/c7nr04155a
  • 出版年:   2017

▎ 摘  要

Atmospheric chemical doping can be used to modify the electronic properties of graphene. Here we report that the chemical atmospheric doping (derived from air, oxygen and water vapor) of low-carrierdensity monolayer epitaxial graphene on SiC can be readily tuned by a simple low-temperature (T