▎ 摘　　要

Two-dimensional materials are promising for applications in next generation electronic devices. However, those promising applications are hampered by their stability and band characteristics. Graphene and h-BN are very stable with a zero and a large band gap of similar to 5 eV, respectively. An interesting question is: Is it possible to embed h-BN into graphene and/or vice versa to achieve novel semiconducting materials suitable for electronic device applications? In this study, we explore the electronic properties of mutually embedded h-BN and graphene by using first-principles calculations. Our results provide insights to the electronic properties of mutually embedded graphene and h-BN structures. (C) 2016 Elsevier B. V. All rights reserved.