▎ 摘　　要

A numerical method for obtaining the frequency-dependent noise temperature in monolayer graphene is presented. From the mobility and diffusion coefficient values provided by Monte Carlo simulation, the noise temperature in graphene is studied up to the THz range, considering also the influence of different substrate types. The influence of the applied electric field is investigated: the noise temperature is found to increase with the applied field, dropping down at high frequencies (in the sub-THz range). The results show that the low-frequency value of the noise temperature in graphene on a substrate tends to be reduced as compared to the case of suspended graphene due to the important effect of remote polar phonon interactions, thus indicating a reduced emitted noise power; however, at very high frequencies the influence of the substrate tends to be significantly reduced, and the differences between the suspended and on-substrate cases tend to be minimized. The values obtained are comparable to those observed in GaAs and semiconductor nitrides.