▎ 摘　　要

Wrinkles are often formed on CVD-graphene in an uncontrollable way. By designing the surface morphology of growth substrate together with a suitable transfer technique, we are able to engineer the dimension, density, and orientation of wrinkles on transferred CVD-graphene. Such kind of wrinkle engineering is employed to fabricate highly aligned graphene nanoribbon (GNR) arrays by self-masked plasma-etching. Strictly consistent with the designed wrinkles, the density of GNR arrays varied from similar to 0.5 to 5 GNRs/mu m, and over 88% GNRs are less than 10 nm in Width. Electrical transport measurements of these GNR-based FETs exhibit an on/off ratio of similar to 30, suggesting an opened bandgap. Our Wrinkle engineering approach allows very easily for a massive production of GNR arrays with bandgap-required widths, which opens a practical pathway for large-scale integrated graphene devices.