▎ 摘　　要

Graphene based flash memory was demonstrated by using nickel nanocrystals as storage nodes. As-grown graphene films were characterized by transmission electron microscopy and Raman spectroscopy to show good film quality. On/off operation of the transistor memory was acquired by static pulse response measurement. The memory window of the device was found up to be 23.1 V by back gate sweep. This memory effect is attributed to charging/discharging of nanocrystals. Furthermore, excellent retention and endurance performance were achieved. (C) 2011 American Institute of Physics. [doi:10.1063/1.3640210]