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- 文献标题: Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices (vol 5, pg 22109, 2020)
- 文献类型: Correction
- 作 者: SHARMA I, PAPANAI GS, PAUL SJ, GUPTA BK
- 作者关键词:
- 出版物名称: ACS OMEGA
- ISSN: 2470-1343
- 通讯作者地址:
- 被引频次: 0
- DOI: 10.1021/acsomega.0c04479
- 出版年: 2020
