▎ 摘　　要

Detection of nitrite is important for environmental safety and human health, and the development of high-performance sensors for accurate detection of nitrite is highly desirable. Herein, a highly sensitive graphene electrochemical transistor (GECT) nitrite sensor was designed and fabricated for the first time. A single layer of graphene was placed between the source and drain electrodes by the wetting transfer method to act as channel for the transistor. Au nanoparticles modified reduced graphene oxide nanocomposites (AuNPs/RGO) were electrodeposited at the transistor gate to improve its catalytic oxidation performance of nitrite with optimized electrodeposition conditions. The sensing principle was attributed to changes in effective gate voltage applied to GECT induced by electrooxidation of nitrite at gate electrodes. Due to the high carrier mobility of graphene in the channel and the excellent electrocatalytical activity of AuNPs/RGO on the gate, the obtained sensor device exhibited an exceedingly low detection limit (0.1 nM nitrite) and ultra-wide linear range from 0.1 nM to 7 mu M and from 7 to 1000 mu M, which are comparable or superior to the performance of large-scale instruments (e.g. chromatography, spectrophotometry, and spectrofluorimetry etc.). The GECT device also showed good anti-interference performance toward common interfering ions and stable performances. Nitrite in natural lake water has been proven to be monitored by our devices. Therefore, the present novel GECT sensor could act as a desirable practical platform for highly sensitive detection of nitrite in the food and environmental fields.