▎ 摘　　要

As a typical two-dimensional (2D) layered material, (vanadium disulfide) VS2 has huge potentials for application in SIBs due to its large interlayer spacing and high conductivity compared to metal oxide or other 2D materials. Reduced graphene oxide (RGO) possesses exceptional electronic properties and large specific area favoring fast electron transport and rich redox sites. In this work, VS2 hollow flower spheres and RGO nanocomposites were developed for the first time, it was synthesized using a facile solvothermal method. Benefiting from the exceptional layered structure, when used as the anode material for SIBs at room temperature, the as-prepared electrode material of VS2 hollow flower spheres @RGO (named as VS2 HFS/RGO) nanocomposites delivers a high reversible discharge specific capacity of around 430 mAh/g at current density of 100 mA/g, superior rate performance (2 A/g) and excellent cycling properties with the discharge capacity remained 350 mAh/g at 100 mA/g after 500 cycles. Results show that the kinetics of VS2 HFS/RGO nanocomposites were mainly a capacitive-controlled storage process and the high capacity contribution were beneficial for good rate performance. This work could provide new approaches and potentials for exploring and searching high performances anode materials for the practical applications of SIBs.