• 文献标题:   Shot noise measurements in graphene
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   DANNEAU R, WU F, CRACIUN MF, RUSSO S, TOMI MY, SALMILEHTO J, MORPURGO AF, HAKONEN PJ
  • 作者关键词:   nanostructure, electronic transport, noise
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098 EI 1879-2766
  • 通讯作者地址:   Helsinki Univ Technol
  • 被引频次:   13
  • DOI:   10.1016/j.ssc.2009.02.046
  • 出版年:   2009

▎ 摘  要

We have investigated shot noise at microwave frequencies in wide-aspect-ratio graphene sheets in the temperature range of 4.2-30 K. We find that for our short (L < 300 nm) graphene samples with width over length ratio W/L > 3, the Fano factor f reaches a maximum f similar to 1/3 at the Dirac point and that it decreases substantially with increasing charge density. Our results agree with the theoretical prediction that electrical transport at the Dirac point is governed by evanescent electronic states. (C) 2009 Elsevier Ltd. All rights reserved.