• 文献标题:   Negative compressibility in graphene-terminated black phosphorus heterostructures
  • 文献类型:   Article
  • 作  者:   WU YY, CHEN XL, WU ZF, XU SG, HAN TY, LIN JXZ, SKINNER B, CAI Y, HE YH, CHENG C, WANG N
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Hong Kong Univ Sci Technol
  • 被引频次:   8
  • DOI:   10.1103/PhysRevB.93.035455
  • 出版年:   2016

▎ 摘  要

Negative compressibility is a many-body effect wherein strong correlations give rise to an enhanced gate capacitance in two-dimensional (2D) electronic systems. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The encapsulation of BP by hexagonal boron nitride sheets with few-layer graphene as a terminal ensures ultraclean heterostructure interfaces, allowing us to observe negative compressibility at low hole carrier concentrations. We explain the negative compressibility based on the Coulomb correlation among in-plane charges and their image charges in a gate electrode in the framework of Debye screening.