• 文献标题:   Super tiny nanoscale graphene nanoribbon field-effect transistor
  • 文献类型:   Article
  • 作  者:   YI ZJ, SHAO QY, ZHANG J
  • 作者关键词:   graphene nanoribbon, fieldeffect transistor, nonequilibrium greeds function, on/off current ratio, pn junction
  • 出版物名称:   CHINESE JOURNAL OF PHYSICS
  • ISSN:   0577-9073
  • 通讯作者地址:   South China Normal Univ
  • 被引频次:   2
  • DOI:   10.1016/j.cjph.2019.03.015
  • 出版年:   2019

▎ 摘  要

Carbon material, especially the graphene nanoribbon (GNR), is well-known for its exceptional transmission properties. Graphene has become one of the most promising alternative materials for solving problems of the density scaling determined by Moore' law. Instead of designing the structure into Schottky contacts, our transistor controls the drain current on the atomic scale by doping B/N atoms. By a regular geometric doping atoms, a good transmission performance has been achieved on a small dimension for the first time. The footprint of our transistor is 2.55 nm, including a 1.7 nm channel length and 0.425 nm contact length, the size of the footprint is 16 times smaller than the most recent work. Furthermore, the transistor also shows acceptable properties in transmission. The drain current has a good linearity with the variation of V-gs, especially in the range of 0.8 V to 1.2 V and the range of 1.8 V to 2.1 V. The on/off current ratio is 0.64 x 10(2) and the on-stage current density is 9.87 mA/mu m.