▎ 摘　　要

The degree of localization of nonbonding orbitals (and the related spin density) in defected or decorated graphenic materials is addressed. For a defect consisting of a translationally symmetric boundary, such orbitals (if they occur) appear to be exponentially localized at the boundary, with the range correlating with the "mobility gap" at the corresponding wave vector. For a defect consisting of vacancies of one or more nearby sites, such orbitals (if they occur) appear to be localized around the defect with a power-law decay away from the defect. Moreover, a simple criterion for such defect-localized orbitals, as well as some characteristics and possible consequences of the nonbonding defect-localized orbitals, is noted.