• 文献标题:   Gate-tunable Thermoelectric Effects in a Graphene/WS2 van der Waals Heterostructure
  • 文献类型:   Article
  • 作  者:   LEE J, SON M, JEONG H, SIM I, MYOUNG N
  • 作者关键词:   graphene, van der waals heterostructure, thermoelectric effect, seebeck coefficient, tunnel junction
  • 出版物名称:   JOURNAL OF THE KOREAN PHYSICAL SOCIETY
  • ISSN:   0374-4884 EI 1976-8524
  • 通讯作者地址:   Chosun Univ
  • 被引频次:   0
  • DOI:   10.3938/jkps.73.940
  • 出版年:   2018

▎ 摘  要

Thermoelectric effects of Dirac fermions through a van der Waals (vdW) heterostructure consisting of graphene and tungsten diselenide (WS2) are theoretically investigated. When the lattice temperature of the top graphene layer differs from that of the bottom graphene layer, thermally excited Dirac fermions can be transferred through the WS2 layer, generating tunnel current. This thermoelectric tunnel current shows drastic changes in its characteristics as a consequence of gatevoltage tuning. The thermoelectric power of the proposed graphene-WS2 vdW heterostructure is characterized by examining the Seebeck coefficient.