• 文献标题:   Gap opening in topological-defect lattices in graphene
  • 文献类型:   Article
  • 作  者:   DA SILVAARAUJO J, CHACHAM H, NUNES RW
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121 EI 1550-235X
  • 通讯作者地址:   Univ Fed Minas Gerais
  • 被引频次:   20
  • DOI:   10.1103/PhysRevB.81.193405
  • 出版年:   2010

▎ 摘  要

Ab initio calculations indicate that topological-defect networks in graphene display the full variety of single-particle electronic structures, including Dirac-fermion null-gap semiconductors, as well as metallic and semiconducting systems of very low formation energies with respect to a pristine graphene sheet. Corrugation induced by the topological defects further reduces the energy and tends to reduce the density of states at the Fermi level, to widen the gaps, or even to lead to gap opening in some cases where the parent planar geometry is metallic.