▎ 摘　　要

We have investigated shot noise and conduction of graphene field-effect nanoribbon devices at low temperature. By analyzing the exponential I-V characteristics of our devices in the transport gap region, we found out that transport follows variable range hopping laws at intermediate bias voltages 1 < V-bias < 12 mV. In parallel, we observe a strong shot noise suppression leading to very low Fano factors. The strong suppression of shot noise is consistent with inelastic hopping, in crossover from one-to two-dimensional regime, indicating that the localization length l(loc) < W in our nanoribbons.