• 文献标题:   Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field-Effect Transistors
  • 文献类型:   Article
  • 作  者:   SMITH S, LLINAS JP, BOKOR J, SALAHUDDIN S
  • 作者关键词:   graphene nanoribbon, steepslope switch, negative differential resistance, quantum transport
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106 EI 1558-0563
  • 通讯作者地址:   Univ Calif Berkeley
  • 被引频次:   4
  • DOI:   10.1109/LED.2017.2772865
  • 出版年:   2018

▎ 摘  要

We show that recently fabricated Chevron-type graphene nanoribbons act as a monolithic superlattice structure. This is enabled by the large periodic unit cells with regions of different effective bandgaps in these nanoribbons, resulting in minibands and gaps in the density of states above the conduction band edge. Quantum transport calculations based on non-equilibrium Green's function formalism reveal that a negative differential resistance (NDR) is expected to manifest in these nanoribbons. Due to the relatively low density of states, such NDR behavior can also be modulated with a gate electric field. We show that a sub-thermal subthreshold swing (