• 文献标题:   Reststrahl band-assisted photocurrents in epitaxial graphene layers
  • 文献类型:   Article
  • 作  者:   OLBRICH P, DREXLER C, GOLUB LE, DANILOV SN, SHALYGIN VA, YAKIMOVA R, LARAAVILA S, KUBATKIN S, REDLICH B, HUBER R, GANICHEV SD
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Univ Regensburg
  • 被引频次:   12
  • DOI:   10.1103/PhysRevB.88.245425
  • 出版年:   2013

▎ 摘  要

We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in two-dimensional crystals and other atomic scale structures can be giantly enhanced by their deposition on a substrate with negative dielectric constant.