▎ 摘　　要

Nanostructured transition metal dichalcogenide (TMDs) materials exhibit promising potential in next-generation optoelectronic devices and catalysts. TMDs possess chemically inert basal planes and catalytically active edge sites, with the relative population of the latter being a decisive factor for tailoring the structural, chemical and electronic properties of such nanostructures. In virtually all applications, TMD-based assemblies must be interfaced with other materials (such as graphitic domains in an electrode). During the in situ growth of MoS2 nanostructures in the presence of oxygen-doped graphitic materials, the formation of amorphous and/or crystalline Mo-based species could influence the chemical environment and electronic properties of the composites. In this study a detailed investigation of both graphene oxide (GO) and reduced graphene oxide (rGO) with MoSxOy composites were studied for the first time with X-ray and ultra-violet photoelectron spectroscopies (XPS/UPS). The composites were obtained upon gradual heating of GO and rGO with ammonium tetra-thiomolubdate (ATTM) hybrid films in Ultra High Vacuum where Mo6+, Moa+ (5