• 文献标题:   Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition
  • 文献类型:   Article
  • 作  者:   CAI WW, MOORE AL, ZHU YW, LI XS, CHEN SS, SHI L, RUOFF RS
  • 作者关键词:   thermal conductivity, thermal interface resistance, graphene, raman, measurement
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Univ Texas Austin
  • 被引频次:   654
  • DOI:   10.1021/nl9041966
  • 出版年:   2010

▎ 摘  要

Graphene monolayer has been grown by chemical vapor deposition on copper and then suspended over a hole. By measuring the laser heating and monitoring the Raman G peak, we obtain room-temperature thermal conductivity and interface conductance of (370 + 650/-320) W/m K and (28 + 16/-9.2) MW/m(2) K For the supported graphene. The thermal conductivity of the suspended graphene exceeds (2500 + 1100/-1050) W/m K near 350 K and becomes (1400 + 500/-480) W/m K at about 500 K.