• 文献标题:   Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources
  • 文献类型:   Article
  • 作  者:   LI ZC, WU P, WANG CX, FAN XD, ZHANG WH, ZHAI XF, ZENG CG, LI ZY, YANG JL, HOU JG
  • 作者关键词:   graphene, low temperature growth, chemical vapor deposition, solid carbon source, liquid carbon source
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851
  • 通讯作者地址:   Univ Sci Technol China
  • 被引频次:   223
  • DOI:   10.1021/nn200854p
  • 出版年:   2011

▎ 摘  要

Graphene has attracted a lot of research Interest owing to its exotic properties-and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000 degrees C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400 degrees C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300 degrees C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a, way to an undemanding route for economical and convenient graphene growth.