• 文献标题:   Short-Channel Graphene Mixer With High Linearity
  • 文献类型:   Article
  • 作  者:   GAO QG, LI XF, TIAN MC, XIONG X, ZHANG ZF, WU YQ
  • 作者关键词:   graphene, field effect transistor, mixer, linearity, iip3
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106 EI 1558-0563
  • 通讯作者地址:   Huazhong Univ Sci Technol
  • 被引频次:   8
  • DOI:   10.1109/LED.2017.2718732
  • 出版年:   2017

▎ 摘  要

Frequency mixers based on short channel transistors using single crystal chemical vapor deposited graphene were fabricated and the linearity of these mixers were fully characterized. The linearity increases with decreasing gate length while the input third-order intercept point is independent on local oscillation (LO) power for the short channel 100-nm transistors. 20-dBm 1-dB compression point (CP1dB) and 29-dBm third-order intercept point can be achieved for the 100-nm-gate-length graphenemixer at 15-dBm LO Power. The excellent linearity of the short channel graphene mixers shows potential for applications in high-quality radio frequency front ends.