• 文献标题:   Opening Band Gap of Graphene by Chemical Doping: a First Principles Study
  • 文献类型:   Article
  • 作  者:   GUANG XM, ZHANG HY, ZHANG M, LUO YH
  • 作者关键词:   grapheme, chemical doping, dft, band gap
  • 出版物名称:   CHINESE JOURNAL OF STRUCTURAL CHEMISTRY
  • ISSN:   0254-5861
  • 通讯作者地址:   E China Univ Sci Technol
  • 被引频次:   5
  • DOI:  
  • 出版年:   2014

▎ 摘  要

Single atom chemically doped graphene has been theoretically studied by density functional theory. The largest band gap, 0.62 eV, appears in arsenic atom doped graphene, then 0.60 eV comes by the tin atom, whose deformations can neither be ignored. It is also found that oxygen and iron single atom embedded graphene can open band gap by 0.52 and 0.54 eV, respectively. Moreover, doping O atom shows little distortion and high stability by charge redistribution. The band gap of Fe doped graphene is opened by orbital hybridization. The other heteroatom doped results are a little inferior to them.