• 文献标题:   Feasibility of a Dual-Gate Graphene Transistor to Test Various Gate Dielectrics for Two-Dimensional Device Application
  • 文献类型:   Article
  • 作  者:   PARK N, SUH D, KANG H
  • 作者关键词:   2d material, graphene, fieldeffect transistor, dualgate, ferroelectric
  • 出版物名称:   JOURNAL OF THE KOREAN PHYSICAL SOCIETY
  • ISSN:   0374-4884 EI 1976-8524
  • 通讯作者地址:   Pusan Natl Univ
  • 被引频次:   0
  • DOI:   10.3938/jkps.77.888
  • 出版年:   2020

▎ 摘  要

Graphene transistors with a dual-gate structure have been fabricated to study the effects of a functional dielectric substrate. From graphene's conductance modulation by using dual-gate voltage control in which a polymethyl methacrylate (PMMA) layer is employed as a top-gate dielectric, we propose that the interaction between the graphene and the functional material working as a back-gate dielectric substrate can be understood. We evaluated two graphene devices, one having the standard structure of Si/SiO2/graphene/PMMA/top-gate and the other employing periodically poled lithium niobate (PPLN) with the structure of PPLN/graphene/PMMA/top-gate. The feasibility of this approach is discussed in terms of the effect of the alternating polarization domains on graphene's charge transport.