▎ 摘　　要

Here, we present a reliable process to deposit transparent conductive films on silicon oxide, quartz, and sapphire using a solid carbon source. This layer consists of partially ordered graphene flakes with a lateral dimension of about 5 nm. The process does not require any catalytic metal and exploits a high current arc evaporation (Phi-HCA) to homogeneously deposit a layer of carbon on heated substrates. A gas atmosphere consisting of Argon or Argon/Hydrogen blend acting as a buffer influences the morphology of the growing film. scanning tunneling microscopy, transmission electron microscopy, and Raman spectra were used for a thorough characterization of the samples in order to optimize the growth parameters. The best carbon layers have a surface resistance of 5.7 x 10(3) Omega(square) whereas the optical transparency of the coatings is 88% with an excellent homogeneity over areas of several cm(2). Such results are compatible with most semiconductor fabrication processes and make this method very promising for various industrial applications. (C) 2015 AIP Publishing LLC.