▎ 摘　　要

We study with Raman spectroscopy the influences of He+ bombardment and the environment on beam-induced defects, in graphene encapsulated in hexagonal boron nitride (h-BN). We show, for the first time experimentally the autonomous behavior of the D', defect Raman peak: in Contrast to the D defect peak, the D' defect peak is sensitive to the local environment. In particular, it saturates with ion dose in the encapsulated graphene. Electrical measurements reveal n-type: conduction in the BN-encapsulated graphene. We conclude that unbound atoms ("interfacials between the sp(2)-layers of graphene and h-BN promote self healing of the beam-induced lattice damage and that nitrogen-carbon exchange leads to n-doping of graphene: