▎ 摘　　要

Epitaxial graphene growth on SiC by Si selective etching using tetrafluorosilane (SiF4) is introduced, where SiF4 in Ar ambient selectively etches Si from the SiC surface at temperatures 1400 degrees C or above, leaving the C as graphene. Raman spectra of SiC treated in Ar for 60 min at 300 Torr did not show a graphene G-peak. However, with the addition of SiF4, a clear G-peak was observed for the surface treated for only 1 min, demonstrating faster Si removal using SiF4. Si selective etching of SiC is explained by the Gibbs free energy, where Si removal is more favorable compared to C removal by SiF4. (C) 2015 The Japan Society of Applied Physics