• 文献标题:   Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots
  • 文献类型:   Article
  • 作  者:   LIN TN, INCIONG MR, SANTIAGO SRMS, YEH TW, YANG WY, YUAN CT, SHEN JL, KUO HC, CHIU CH
  • 作者关键词:  
  • 出版物名称:   SCIENTIFIC REPORTS
  • ISSN:   2045-2322
  • 通讯作者地址:   Chung Yuan Christian Univ
  • 被引频次:   5
  • DOI:   10.1038/srep23260
  • 出版年:   2016

▎ 摘  要

We demonstrate a new doping scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement of PL in GaN is observed after the doping. On the basis of time-resolved PL studies, the PL enhancement is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer process is caused by the work function difference between GQDs and GaN, which is verified by Kelvin probe measurements. We have also observed that photocurrent in GaN can be enhanced by 23-fold due to photo-induced doping with GQDs. The improved optical and transport properties from photoinduced doping are promising for applications in GaN-based optoelectronic devices.