▎ 摘　　要

Transfer-free synthesis of graphene on dielectric substrates is highly desirable, but remains challenging. Here, using a thin sacrificial platinum (Pt) layer as a catalyst, graphene was deposited on silicon (Si) substrate through a simple and transfer-free synthesis method. During graphene growth, the Pt layer evaporated, resulting in direct deposition of graphene on the Si substrate. In this work, different growth conditions of graphene were optimized. Raman spectra of the produced graphene indicated that the obtained graphene was bilayer. The sheet resistance obtained from four-point probe measurements demonstrated that the deposited graphene had high conductivity. Reflectance spectroscopy of graphene-coated Si showed a decrease in reflectance across the wavelength range of 200-800 nm, indicating that the graphene coating on the Si surface had antireflective capabilities.