• 文献标题:   Graphene/porous silicon Schottky-junction solar cells
  • 文献类型:   Article
  • 作  者:   SHIN DH, KIM JH, KIM JH, JANG CW, SEO SW, LEE HS, KIM S, CHOI SH
  • 作者关键词:   porous si, graphene, solar cell, schottky junction, doping, ag nanowire
  • 出版物名称:   JOURNAL OF ALLOYS COMPOUNDS
  • ISSN:   0925-8388 EI 1873-4669
  • 通讯作者地址:   Kyung Hee Univ
  • 被引频次:   22
  • DOI:   10.1016/j.jallcom.2017.05.001
  • 出版年:   2017

▎ 摘  要

Porous silicon (PSi) is highly attractive for the solar cell applications due to its unique properties such as efficient antireflection, band gap widening, broad range of optical absorption/transmission, and surface passivation/texturization effect. We first report PSi Schottky-type heterojunction solar cells by employing graphene transparent conductive electrodes doped with silver nanowires (Ag NWs). The PSi is formed based on metal-assisted chemical etching process, and its porosity is controlled by varying the deposition time (t(d)) of Ag nanoparticles used for the etching. The Ag NWs-doped graphene/PSi solar cells show a maximum power-conversion efficiency (PCE) of 4.03% at t(d) = 3 s/concentration (nA) of Ag NWs = 0.1 wt percent (wt%). As td increases, the diode ideality factor and the light absorption increase. As nA increases, the work function (thus the open circuit voltage) and the transmittance decrease whilst the light absorption increases/the sheet resistance decreases. These trade-offs explain why the PCE is maximized at t(d) = 3 s/nA = 0.1 wt%. (C) 2017 Elsevier B.V. All rights reserved.