• 文献标题:   High-Performance Graphene Devices on SiO2/Si Substrate Modified by Highly Ordered Self-Assembled Monolayers
  • 文献类型:   Article
  • 作  者:   WANG XM, XU JB, WANG CL, DU J, XIE WG
  • 作者关键词:  
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Chinese Univ Hong Kong
  • 被引频次:   81
  • DOI:   10.1002/adma.201100476
  • 出版年:   2011

▎ 摘  要

A SiO2/Si substrate modified by an octadecyltrimethoxysilane (OTMS) self-assembled monolayer is used to obtain high-quality graphene devices with low intrinsic doping level. The carrier mobility can reach 47 000 cm(2) V-1 s(-1). The findings will pave the way for approaching the intrinsic properties of supported graphene, elucidating the scattering origins, and gaining a better understanding of the mechanism of carrier transport in graphene.