• 文献标题:   Four-Fold Increase in the Intrinsic Capacitance of Graphene through Functionalization and Lattice Disorder
  • 文献类型:   Article
  • 作  者:   POPE MA, AKSAY IA
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICAL CHEMISTRY C
  • ISSN:   1932-7447
  • 通讯作者地址:   Princeton Univ
  • 被引频次:   25
  • DOI:   10.1021/acs.jpcc.5b07521
  • 出版年:   2015

▎ 摘  要

Graphene has been heralded as a promising electrode material for high energy and power density electrochemical supercapacitors. This is in spite of recent work confirming the low double-layer capacitance (C-DL) of the graphene/electrolyte interface limited by graphene's low quantum capacitance (C-Q), an effect known for the basal plane of graphite for over four decades. Consistent with this limit, much of the supercapacitor research implies the use of pristine graphene but, in contrast, uses a functionalized and defective graphene formed through the reduction of graphene oxide, without clarifying why reduced graphene oxide is needed to achieve high capacitance. Herein, we show that an optimal level of functionalization and lattice disorder in reduced graphene oxide yields a 4-fold increase in C-DL over that of pristine graphene, suggesting graphene-based materials can indeed be tailored to engineer electrodes with significantly higher gravimetric capacitance limits exceeding 450 F/g than what has been achieved (similar to 274 F/g) thus far, even in nonaqueous electrolytes capable of high voltage operation.