• 文献标题:   Free-standing graphene at atomic resolution
  • 文献类型:   Article
  • 作  者:   GASS MH, BANGERT U, BLELOCH AL, WANG P, NAIR RR, GEIM AK
  • 作者关键词:  
  • 出版物名称:   NATURE NANOTECHNOLOGY
  • ISSN:   1748-3387
  • 通讯作者地址:   STFC Daresbury Lab
  • 被引频次:   441
  • DOI:   10.1038/nnano.2008.280
  • 出版年:   2008

▎ 摘  要

Research interest in graphene, a two-dimensional crystal consisting of a single atomic plane of carbon atoms, has been driven by its extraordinary properties, including charge carriers that mimic ultra-relativistic elementary particles. Moreover, graphene exhibits ballistic electron transport on the submicrometre scale, even at room temperature, which has allowed the demonstration of graphene-based field-effect transistors and the observation of a room-temperature quantum Hall effect. Here we confirm the presence of free-standing, single-layer graphene with directly interpretable atomic-resolution imaging combined with the spatially resolved study of both the pi -> pi* transition and the pi + sigma plasmon. We also present atomic-scale observations of the morphology of free-standing graphene and explore the role of microstructural peculiarities that affect the stability of the sheets. We also follow the evolution and interaction of point defects and suggest a mechanism by which they form ring defects.