▎ 摘　　要

This work brings original measurements on the impact of carrier concentration on Raman features of defective graphene at various bottomgate voltages. We show that the D and 2D modes characteristics exhibit a significant dependence on gate voltage induced doping. For single layer defective graphene, we report new measurements with quite accurate trends of the variation of these both modes characteristics; specifically, the intensity, the line width and the position of the D-mode, and the line width and the position of the 2D-mode; as a function of the doping level. The D Raman spectra features show relevant and original trends of (i) the intensity, (ii) the width, (iii) the position and (iv) the D-to-G intensity ratio when doping is located near and/or far from the Dirac point. The 2D-mode position and width do not vary significantly for a moderate doping, nevertheless, the measure-ments of the 2D mode FWHM show new dependance that can be approximated by a parabolic trend centered around the charge neutrality point.