▎ 摘　　要

Repetitious mechanical stress or external mechanical impact can damage wearable electronic devices, leading to serious degradations in their electrical performances, which limits their applications. Because self-healing would be an excellent solution to the above-mentioned issue, this paper presents a self-healable memory device based on a novel nanocomposite layer consisting of a polyvinyl alcohol matrix and imidazole-modified graphene quantum dots. The device exhibits reliable electrical performance over 600 cycles, and the electrical properties of the device are maintained without any failure under this bending stress. Further, it is confirmed that the damaged device can recover its original electric characteristics after the self-healing process. It is believed that such outstanding results will lead the way to the realization of future wearable electronic systems.