▎ 摘　　要

Low-pressure chemical vapor deposition growth of graphene on Iridium (Ir) layers epitaxially deposited on alpha-Al2O3 (0001) substrates was investigated. The X-ray diffraction, Raman and reflection high energy electron diffraction characterizations revealed that graphene films were epitaxially grown on Ir(111) layers, and the in-plane epitaxial relationship between graphene, Ir(111), and alpha-Al2O3 (0001) was graphene < 1 (1) over bar 00 >//Ir < 11 (2) over bar >//alpha-Al2O3 < 11 (2) over bar0 >. The graphene on Ir(111) was electrochemically transferred onto SiO2/Si substrates. We also demonstrated the reuse of the Ir(111)/alpha-Al2O3 (0001) substrates in multiple growth and transfer cycles. Published by AIP Publishing.