▎ 摘　　要

A scheme of identification of scattering mechanisms in epitaxial graphene (EG) on SiC substrate is developed and applied to three EG samples grown on SiC (0001), (11 (2) over bar0), and (10 (1) over bar0) substrates. Hall measurements combined with defect detection technique enable us to evaluate the individual contributions to the carrier scatterings by defects and by substrates. It is found that the dominant scatterings can be due to either substrate or defects, dependent on the substrate orientations. The EG on SiC (11 (2) over bar0) exhibits a better control over the two major scattering mechanisms and achieves the highest mobility even with a high carrier concentration, promising for high performance graphene-based electronic devices. The method developed here will shed light on major aspects in governing carrier transport in EG to harness it effectively. (C) 2014 AIP Publishing LLC.