• 文献标题:   Detecting zero-line mode in bilayer graphene via the quantum Hall effect
  • 文献类型:   Article
  • 作  者:   ZHANG YT, QIAO ZH, SUN QF
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Hebei Normal Univ
  • 被引频次:   3
  • DOI:   10.1103/PhysRevB.87.235405
  • 出版年:   2013

▎ 摘  要

The zero-line mode can be produced in AB-stacking bilayer graphene under a spatially varying electric field. We investigate the transport properties of the zero-line mode in a six-terminal Hall bar system in the presence of a uniform magnetic field. We find that the Hall resistance is zero and the longitudinal resistance exhibits a plateau with 1/2(h/2e(2)), when the Fermi level lies between the lowest conduction and highest valence Landau levels, which corresponds to the zero-line modes. Since the zero-line mode propagates along the domain wall separating opposite valley-Hall topologies, we also numerically measure the currents between source and drain and the conductance between two of the transversal terminals. Our finding shows that the current between source and drain is due to the existence of kink state, which can serve as a scheme to detect the zero-line mode. We further show that the zero-line mode under strong magnetic field is robust against disorders.