▎ 摘　　要

We report a method to realize the H-2 production and graphene-oxide (GO) reduction simultaneously over GO/SiC composite under visible light irradiation with KI as sacrifice reagent. The weight content of GO is regulated in the reaction system. The rate of H-2 production reaches to 95 mu L/h with 1% GO content in GO/SiC composite system, which is 1.3 times larger compared to the case in pure SiC NPs under visible light. The reduced-GO sheet can serve as an electron collector and transporter to efficiently separate the photo-generated electron-hole pairs, lengthening the lifetime of the charge carriers effectively. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792695]